Micron Technology DRAM SDRAM-DDR3L, Part #: MT53E256M32D2DS-046 AUT:B TR | Dynamic random access memory | DEX silicon graphics Micron Technology DRAM RLDRAM2

Micron Technology DRAM RLDRAM2

and a fabric interface

Xilinx Field Programmable Gate Array Part #XCZU5EV-1FBVB900I

EP3C16E144C8N

With a 5V supply

Micron Technology DRAM SDRAM-DDR3L, Part #: MT53E256M32D2DS-046 AUT:B TR | Dynamic random access memory | DEX silicon graphics Micron Technology DRAM RLDRAM2Micron Technology DRAM SDRAMMobile , Part #: MT53E256M32D2DS 046 AUT: B TR features: Ultra low voltage core and I O power supplies VDD1 = 1. 701. 95V; 1. 80V nominal VDD2 = 1. 061. 17V; 1. 10V nominal VDDQ = 1. 061. 17V; 1. 10V nominal or Low VDDQ = 0. 570. 65V; 0. 60V nominal Frequency range 213310 MHz (data rate range: 426620 Mb s pin) 16n prefetch DDR architecture 8 internal banks per channel for concurrent operation Single data rate CMD ADR entry