Micron Technology DRAM SDRAM-DDR4, Part #: MT40A1G8SA-062E AIT:E | Dynamic random access memory | DEX Renewable Spare Parts 2 data accesses per clock

2 data accesses per clock cycle • Differential clock inputs (CK and CK#) • Commands entered on each positive CK edge • DQS edge-aligned with data for READs

SelectIO™ Interface DC

Onsemi CMOS Image Sensor

Chevrolet Active Safety Control Module Part #84991870

2100948-29

Micron Technology DRAM SDRAM-DDR4, Part #: MT40A1G8SA-062E AIT:E | Dynamic random access memory | DEX Renewable Spare Parts 2 data accesses per clockMicron Technology DRAM SDRAM DDR4, Part #: MT40A1G8SA 062E AIT: E features: VDD = VDDQ = 1. 2V + 60mv VPP = 2. 5V, 125mV, + 250mV On die, internal, adjustable VREFDQ generation 1. 2V pseudo open drain I O Refresh time of 8192 cycle at TC temperature range: 16 internal banks (x4, x8): 4 groups of 4 banks each 8n bit prefetch architecture Programmable data strobe preambles Data strobe preamble training Command Address latency (CAL) Multipurpose register