Micron Technology DRAM SDRAM-DDR4, Part #MT40A1G16KNR-062E:E TR | Dynamic random access memory | DEX Diodes Incorporated Number of Drivers/Receivers: 1/1

Number of Drivers/Receivers: 1/1

XANTREX TECHNOLOGY INC

MT44K32M36RB-093E:A

Tested in accordance with ASTM D6978-05 Standard Practice for Assessment of Resistance of Medical Gloves to Permeation by Chemotherapy Drugs

Low ripple Burst Mode operation enables high efficiency down to very low output currents while keeping the output ripple below 10mVP-P

Micron Technology DRAM SDRAM-DDR4, Part #MT40A1G16KNR-062E:E TR | Dynamic random access memory | DEX Diodes Incorporated Number of Drivers/Receivers: 1/1The 16Gb (TwinDie) DDR4 SDRAM uses Microns 8Gb DDR4 SDRAM die; two x8s combined to make one x16. Similar signals as mono x16, there is one extra ZQ connection for faster ZQ Calibration and a BG1 control required for x8 addressing. Features Uses two x8 8Gb Micron die to make one x16 Single rank TwinDie VDD = VDDQ = 1. 2V (1. 141. 26V) 1. 2V VDDQ terminated I O JEDEC standard ball out Low profile package TC of 0C to 95C 0C to 85C: 8192 refresh cycles in