Micron Technology DRAM SDRAMMobile-, Part #MT40A256M16LY-075:F | Dynamic random access memory | DEX Semiconductors 4096-cycle (industrial) – 16ms

4096-cycle (industrial) – 16ms

The PECL outputs are 15 mA open collector and must be DC loaded and AC terminated

the ADS8028 dissipates only 17 mW

a programmable Watchdog Timer with Internal Oscillator

N channel vertical power FET with charge pump

Micron Technology DRAM SDRAMMobile-, Part #MT40A256M16LY-075:F | Dynamic random access memory | DEX Semiconductors 4096-cycle (industrial) – 16msMicron Technology DRAM SDRAM DDR4 MT40A256M16LY 075: F Features VDD = VDDQ = 1. 2V 60mV VPP = 2. 5V, 125mV +250mV On die, internal, adjustable VREFDQ generation 1. 2V pseudo open drain I O TC maximum up to 95C 64ms, 8192 cycle refresh up to 85C 32ms, 8192 cycle refresh at >85C to 95C 16 internal banks (x4, x8): 4 groups of 4 banks each 8 internal banks (x16): 2 groups of 4 banks each 8n bit prefetch architecture Programmable data strobe preambles Data